features * 625mw power dissipation *i c cont 3a * 12a peak pulse current * excellent h fe characteristics up to 12a (pulsed) * extremely low saturation voltage e.g. 8mv typ. * extremely low equivalent on resistance; r ce(sat) device type complement partmarking r ce(sat) fmmt617 fmmt717 617 50m w at 3a fmmt618 fmmt718 618 50m w at 2a fmmt619 fmmt720 619 75m w at 2a FMMT624 fmmt723 624 - fmmt625 ? 625 - absolute maximum ratings. parameter symbol fmmt 617 fmmt 618 fmmt 619 fmmt 624 fmmt 625 unit collector-base voltage v cbo 15 20 50 125 150 v collector-emitter voltage v ceo 15 20 50 125 150 v emitter-base voltage v ebo 55555v peak pulse current** i cm 126633a continuous collector current i c 32.5211a base current i b 500 ma power dissipation at t amb =25c* p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c c b e fmmt617 fmmt618 fmmt619 FMMT624 fmmt625 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol FMMT624 fmmt625 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 125 250 150 300 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 125 160 150 175 v i c =10ma* emitter-base breakdown voltage v (br)ebo 58.3 58.3 v i e =100 m a collector cut-off current i cbo 100 100 na na v cb =100v v cb =130v emitter cut-off current i ebo 100 100 na v eb =4v collector emitter cut-off current i ces 100 100 na na v ces =100v v ces =130v collector-emitter saturation voltage v ce(sat) 26 70 160 165 50 150 220 250 26 110 180 50 200 300 mv mv mv mv mv i c =0.1a, i b =10ma* i c =0.1a, i b =1ma* i c =0.5a, i b =50ma* i c =0.5a, i b =10ma* i c =1a, i b =50ma* base-emitter saturation voltage v be(sat) 0.85 1.0 0.85 1.0 v i c =1a, i b =50ma* base-emitter turn-on voltage v be(on) 0.7 1.0 0.74 1.0 v i c =1a, v ce =10v* static forward current transfer ratio h fe 200 300 100 400 450 140 18 200 300 30 400 450 45 15 i c =10ma, v ce =10v* i c =0.2a, v ce =10v* i c =1a, v ce =10v* i c =3a, v ce =10v* transition frequency f t 100 155 100 135 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 7 15 6 10 pf v cb =10v, f=1mhz turn-on time t (on) 60 160 ns v cc =50v, i c =0.5a i b1 =-i b2 =50ma turn-off time t (off) 1300 1500 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% fmmt617 fmmt618 fmmt619 FMMT624 fmmt625 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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